EPCUnited States
GANFET 2N-CH 120V 3.4A DIE
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View full reportTechnical parameters
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 3.4A |
| Drain to Source Voltage (Vdss) | 120V |
| Power - Max | - |
| Environment and package | |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR) Cut Tape (CT) Digi-Reel® |
| Package / Case | Die |
| Supplier Device Package | Die |
| Other | |
| Base Product Number | EPC211 |
| Configuration | 2 N-Channel (Dual) Common Source |
| FET Feature | - |
| Gate Charge (Qg) (Max) @ Vgs | 0.8nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds | 80pF @ 60V |
| Mfr | EPC |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 4A, 5V |
| Series | eGaN® |
| Technology | GaNFET (Gallium Nitride) |
| Vgs(th) (Max) @ Id | 2.5V @ 700µA |