EPCUnited States
GAN TRANS 200V 8MOHM BUMPED DIE
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View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage200 V
Continuous drain current32 A
On-resistance8 mΩMax · 20A
Gate threshold voltage2.5 VMax · 6mA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 32A (Ta) |
| Drain to Source Voltage (Vdss) | 200 V |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Power Dissipation (Max) | - |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR) Cut Tape (CT) Digi-Reel® |
| Package / Case | Die |
| Supplier Device Package | Die |
| Other | |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 17.7 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1790 pF @ 100 V |
| Mfr | EPC |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 20A, 5V |
| Series | - |
| Technology | GaNFET (Gallium Nitride) |
| Vgs (Max) | +6V, -4V |
| Vgs(th) (Max) @ Id | 2.5V @ 6mA |