EPC Space, LLCUnited States
GAN FET HEMT200V18A COTS 4FSMD-B
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View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage200 V
Continuous drain current18 A
On-resistance28 mΩMax · 18A
Gate threshold voltage2.5 VMax · 3mA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
| Drain to Source Voltage (Vdss) | 200 V |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Power Dissipation (Max) | - |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package | Bulk |
| Package / Case | 4-SMD, No Lead |
| Supplier Device Package | 4-SMD |
| Other | |
| Base Product Number | EPC7007 |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 5.4 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 525 pF @ 100 V |
| Mfr | EPC Space, LLC |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 28mOhm @ 18A, 5V |
| Series | e-GaN® |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | +6V, -4V |
| Vgs(th) (Max) @ Id | 2.5V @ 3mA |