Taiwan Semiconductor CorporationTaiwan, China
DIODE GEN PURP 150V 1A SUB SMA
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View full reportTechnical parameters
Key specs
Reverse voltage150 V
Average rectified current1 A
Forward voltage950 mVMax · 1 A
TypeStandardFast Recovery =< 500ns，> 200mA (Io)
| Power | |
|---|---|
| Current - Average Rectified (Io) | 1A |
| Current - Reverse Leakage @ Vr | 5 µA @ 150 V |
| Voltage - DC Reverse (Vr) (Max) | 150 V |
| Voltage - Forward (Vf) (Max) @ If | 950 mV @ 1 A |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Package | Tape & Reel (TR) |
| Package / Case | DO-219AB |
| Supplier Device Package | Sub SMA |
| Other | |
| Base Product Number | ES1C |
| Capacitance @ Vr, F | 10pF @ 1V, 1MHz |
| Mfr | Taiwan Semiconductor Corporation |
| Product Status | Active |
| Reverse Recovery Time (trr) | 35 ns |
| Series | - |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Technology | Standard |