ES2B-LTP

不推荐用于新设计单二极管

DIODE GEN PURP 100V 2A DO214AC

反向耐压100 V
平均整流电流2 A
正向压降950 mV
类型标准

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技术参数

反向耐压100 V
平均整流电流2 A
正向压降950 mV最大 · 2 A
类型标准Fast Recovery =< 500ns,> 200mA (Io)
电源
Current - Average Rectified (Io)2A
Current - Reverse Leakage @ Vr5 µA @ 100 V
Voltage - DC Reverse (Vr) (Max)100 V
Voltage - Forward (Vf) (Max) @ If950 mV @ 2 A
环境与封装
Mounting TypeSurface Mount
Operating Temperature - Junction-65°C ~ 175°C
PackageTape & Reel (TR) Cut Tape (CT)
Package / CaseDO-214AC, SMA
Supplier Device PackageDO-214AC (SMA)
其他
Base Product NumberES2B
Capacitance @ Vr, F15pF @ 4V, 1MHz
MfrMicro Commercial Co
Product StatusNot For New Designs
Reverse Recovery Time (trr)35 ns
Series-
SpeedFast Recovery =< 500ns, > 200mA (Io)
TechnologyStandard

技术资料