Diotec SemiconductorGermany
DIODE GEN PURP 50V 12A P600
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View full reportTechnical parameters
Key specs
Reverse voltage50 V
Average rectified current12 A
Forward voltage910 mVMax · 12 A
TypeStandardFast Recovery =< 500ns，> 200mA (Io)
| Power | |
|---|---|
| Current - Average Rectified (Io) | 12A |
| Current - Reverse Leakage @ Vr | 5 µA @ 50 V |
| Voltage - DC Reverse (Vr) (Max) | 50 V |
| Voltage - Forward (Vf) (Max) @ If | 910 mV @ 12 A |
| Environment and package | |
| Mounting Type | Through Hole |
| Operating Temperature - Junction | -50°C ~ 150°C |
| Package | Tape & Reel (TR) |
| Package / Case | P600, Axial |
| Supplier Device Package | P600 |
| Other | |
| Capacitance @ Vr, F | - |
| Mfr | Diotec Semiconductor |
| Product Status | Active |
| Reverse Recovery Time (trr) | 200 ns |
| Series | - |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Technology | Standard |