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Technical parameters

Key specs

ChannelN-channel
Drain-source voltage600 V
Continuous drain current47 A
On-resistance73 mΩMax · 23.5A
Gate threshold voltage5 VMax · 250μA
Power
Current - Continuous Drain (Id) @ 25°C47A (Tc)
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10V
Power Dissipation (Max)417W (Tc)
Environment and package
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
PackageTube
Package / CaseTO-3P-3, SC-65-3
Supplier Device PackageTO-3PN
Other
Base Product NumberFCA47N60
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds8000 pF @ 25 V
Mfronsemi
Product StatusNot For New Designs
Rds On (Max) @ Id, Vgs73mOhm @ 23.5A, 10V
SeriesSuperFET™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id5V @ 250µA

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