FCD7N60TM-WS
onsemi美国

FCD7N60TM-WS

不推荐用于新设计单 FET,MOSFETTO-252AA

MOSFET N-CH 600V 7A DPAK

沟道N 沟道
耐压600 V
连续漏极电流7 A
导通电阻600 mΩ

全部替代型号

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技术参数

沟道N 沟道
耐压600 V
连续漏极电流7 A
导通电阻600 mΩ最大 · 3.5A
阈值电压5 V最大 · 250μA
电源
Current - Continuous Drain (Id) @ 25°C7A (Tc)
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10V
Power Dissipation (Max)83W (Tc)
环境与封装
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT) Digi-Reel®
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device PackageTO-252AA
其他
Base Product NumberFCD7N60
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds920 pF @ 25 V
Mfronsemi
Product StatusNot For New Designs
Rds On (Max) @ Id, Vgs600mOhm @ 3.5A, 10V
SeriesSuperFET™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id5V @ 250µA

器件图片

技术资料