onsemi美国

FCMT360N65S3

不推荐用于新设计单 FET,MOSFET

MOSFET N-CH 650V 10A 4PQFN

沟道N 沟道
耐压650 V
连续漏极电流10 A
导通电阻360 mΩ

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技术参数

沟道N 沟道
耐压650 V
连续漏极电流10 A
导通电阻360 mΩ最大 · 5A
阈值电压4.5 V最大 · 200μA
电源
Current - Continuous Drain (Id) @ 25°C10A (Tc)
Drain to Source Voltage (Vdss)650 V
Drive Voltage (Max Rds On, Min Rds On)10V
Power Dissipation (Max)83W (Tc)
环境与封装
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT) Digi-Reel®
Package / Case4-PowerTSFN
Supplier Device Package4-PQFN (8x8)
其他
Base Product NumberFCMT360
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds730 pF @ 400 V
Mfronsemi
Product StatusNot For New Designs
Rds On (Max) @ Id, Vgs360mOhm @ 5A, 10V
SeriesSuperFET® III
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id4.5V @ 200µA

技术资料