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Technical parameters

Key specs

ChannelN-channel
Drain-source voltage600 V
Continuous drain current37 A
On-resistance104 mΩMax · 18.5A
Gate threshold voltage5 VMax · 250μA
Power
Current - Continuous Drain (Id) @ 25°C37A (Tc)
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10V
Power Dissipation (Max)357W (Tc)
Environment and package
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
PackageTube
Package / CaseTO-220-3
Supplier Device PackageTO-220-3
Other
Base Product NumberFCP104
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds6130 pF @ 25 V
Mfronsemi
Product StatusNot For New Designs
Rds On (Max) @ Id, Vgs104mOhm @ 18.5A, 10V
SeriesHiPerFET™, Polar™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id5V @ 250µA

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