FCP110N65F
onsemi美国

FCP110N65F

不推荐用于新设计单 FET,MOSFETTO-220-3

MOSFET N-CH 650V 35A TO220-3

沟道N 沟道
耐压650 V
连续漏极电流35 A
导通电阻110 mΩ

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技术参数

沟道N 沟道
耐压650 V
连续漏极电流35 A
导通电阻110 mΩ最大 · 17.5A
阈值电压5 V最大 · 3.5mA
电源
Current - Continuous Drain (Id) @ 25°C35A (Tc)
Drain to Source Voltage (Vdss)650 V
Drive Voltage (Max Rds On, Min Rds On)10V
Power Dissipation (Max)357W (Tc)
环境与封装
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
PackageTube
Package / CaseTO-220-3
Supplier Device PackageTO-220-3
其他
Base Product NumberFCP110
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds4895 pF @ 100 V
Mfronsemi
Product StatusNot For New Designs
Rds On (Max) @ Id, Vgs110mOhm @ 17.5A, 10V
SeriesFRFET®, SuperFET® II
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id5V @ 3.5mA

器件图片

技术资料