onsemiUnited States

FCP170N60

Not For New DesignsSingle FETs, MOSFETsTO-220-3

MOSFET N-CH 600V 22A TO220-3

All alternatives

ChannelN-channel

Drain-source voltage600 V

Continuous drain current22 A

On-resistance170 mΩMax · 11A

Gate threshold voltage3.5 VMax · 250μA

Power
Current - Continuous Drain (Id) @ 25°C	22A (Tc)
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Power Dissipation (Max)	227W (Tc)
Environment and package
Mounting Type	Through Hole
Operating Temperature	-55°C ~ 150°C (TJ)
Package	Tube
Package / Case	TO-220-3
Supplier Device Package	TO-220-3
Other
Base Product Number	FCP170
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	2860 pF @ 380 V
Mfr	onsemi
Product Status	Not For New Designs
Rds On (Max) @ Id, Vgs	170mOhm @ 11A, 10V
Series	SuperFET® II
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	3.5V @ 250µA