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Technical parameters

Power
Current - Continuous Drain (Id) @ 25°C60A
Drain to Source Voltage (Vdss)60V
Power - Max-
Environment and package
Mounting TypeThrough Hole
Operating Temperature-40°C ~ 150°C (TJ)
PackageTube
Package / CaseEPM15
Supplier Device PackageEPM15
Other
Base Product NumberFD6M045
Configuration2 N-Channel (Dual)
FET Feature-
Gate Charge (Qg) (Max) @ Vgs87nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds3890pF @ 25V
Mfronsemi
Product StatusObsolete
Rds On (Max) @ Id, Vgs4.5mOhm @ 40A, 10V
SeriesPower-SPM™
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id4V @ 250µA

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