onsemi美国

FDA032N08

在产单 FET,MOSFETTO-3PN

MOSFET N-CH 75V 120A TO3PN

沟道N 沟道
耐压75 V
连续漏极电流120 A
导通电阻3.2 mΩ

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技术参数

沟道N 沟道
耐压75 V
连续漏极电流120 A
导通电阻3.2 mΩ最大 · 75A
阈值电压4.5 V最大 · 250μA
电源
Current - Continuous Drain (Id) @ 25°C120A (Tc)
Drain to Source Voltage (Vdss)75 V
Drive Voltage (Max Rds On, Min Rds On)10V
Power Dissipation (Max)375W (Tc)
环境与封装
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
PackageTube
Package / CaseTO-3P-3, SC-65-3
Supplier Device PackageTO-3PN
其他
Base Product NumberFDA032
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds15160 pF @ 25 V
Mfronsemi
Product StatusActive
Rds On (Max) @ Id, Vgs3.2mOhm @ 75A, 10V
SeriesPowerTrench®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4.5V @ 250µA

技术资料