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Technical parameters

Key specs

ChannelN-channel
Drain-source voltage500 V
Continuous drain current22 A
On-resistance230 mΩMax · 11A
Gate threshold voltage5 VMax · 250μA
Power
Current - Continuous Drain (Id) @ 25°C22A (Tc)
Drain to Source Voltage (Vdss)500 V
Environment and package
Mounting TypeThrough Hole
PackageTube
Package / CaseTO-3P-3, SC-65-3
Supplier Device PackageTO-3PN
Other
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs59.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3120 pF @ 25 V
MfrFairchild Semiconductor
Product StatusObsolete
Rds On (Max) @ Id, Vgs230mOhm @ 11A, 10V
SeriesUniFET™
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id5V @ 250µA

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