MOSFET N-CH 250V 64A TO3PN
沟道N 沟道
耐压250 V
连续漏极电流64 A
导通电阻34 mΩ
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沟道N 沟道
耐压250 V
连续漏极电流64 A
导通电阻34 mΩ最大 · 40A
阈值电压5 V最大 · 250μA
| 电源 | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 64A (Tc) |
| Drain to Source Voltage (Vdss) | 250 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Power Dissipation (Max) | 357W (Tc) |
| 环境与封装 | |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Supplier Device Package | TO-3PN |
| 其他 | |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 129 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 10175 pF @ 25 V |
| Mfr | Fairchild Semiconductor |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 34mOhm @ 40A, 10V |
| Series | UltraFET™ |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±30V |
| Vgs(th) (Max) @ Id | 5V @ 250µA |