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Technical parameters

Key specs

ChannelN-channel
Drain-source voltage75 V
Continuous drain current120 A
On-resistance8.8 mΩMax · 75A
Gate threshold voltage4 VMax · 250μA
Power
Current - Continuous Drain (Id) @ 25°C120A (Tc)
Drain to Source Voltage (Vdss)75 V
Drive Voltage (Max Rds On, Min Rds On)10V
Power Dissipation (Max)160W (Tc)
Environment and package
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT) Digi-Reel®
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device PackageD²PAK (TO-263)
Other
Base Product NumberFDB088
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs118 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds6595 pF @ 25 V
Mfronsemi
Product StatusActive
Rds On (Max) @ Id, Vgs8.8mOhm @ 75A, 10V
SeriesPowerTrench®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 250µA

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