onsemi美国

FDB2552

在产单 FET,MOSFETTO-263

MOSFET N-CH 150V 5A/37A TO263AB

沟道N 沟道
耐压150 V
连续漏极电流5 ~ 37 A
导通电阻36 mΩ

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技术参数

沟道N 沟道
耐压150 V
连续漏极电流5 ~ 37 A
导通电阻36 mΩ最大 · 16A
阈值电压4 V最大 · 250μA
电源
Current - Continuous Drain (Id) @ 25°C5A (Ta), 37A (Tc)
Drain to Source Voltage (Vdss)150 V
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Power Dissipation (Max)150W (Tc)
环境与封装
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT) Digi-Reel®
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device PackageTO-263 (D2PAK)
其他
Base Product NumberFDB255
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2800 pF @ 25 V
Mfronsemi
Product StatusActive
Rds On (Max) @ Id, Vgs36mOhm @ 16A, 10V
SeriesPowerTrench®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 250µA

技术资料