FDB2710
onsemi美国

FDB2710

在产单 FET,MOSFETD²PAK

MOSFET N-CH 250V 50A D2PAK

沟道N 沟道
耐压250 V
连续漏极电流50 A
导通电阻42.5 mΩ

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技术参数

沟道N 沟道
耐压250 V
连续漏极电流50 A
导通电阻42.5 mΩ最大 · 25A
阈值电压5 V最大 · 250μA
电源
Current - Continuous Drain (Id) @ 25°C50A (Tc)
Drain to Source Voltage (Vdss)250 V
Drive Voltage (Max Rds On, Min Rds On)10V
Power Dissipation (Max)260W (Tc)
环境与封装
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT) Digi-Reel®
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device PackageD²PAK (TO-263)
其他
Base Product NumberFDB271
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs101 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds7280 pF @ 25 V
Mfronsemi
Product StatusActive
Rds On (Max) @ Id, Vgs42.5mOhm @ 25A, 10V
SeriesPowerTrench®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id5V @ 250µA

器件图片

技术资料