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Technical parameters

Key specs

ChannelN-channel
Drain-source voltage75 V
Continuous drain current6 ~ 14 A
On-resistance47 mΩMax · 6A
Gate threshold voltage4.5 VMax · 250μA
Power
Current - Continuous Drain (Id) @ 25°C6A (Ta), 14A (Tc)
Drain to Source Voltage (Vdss)75 V
Drive Voltage (Max Rds On, Min Rds On)10V
Power Dissipation (Max)3.1W (Ta), 41W (Tc)
Environment and package
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT) Digi-Reel®
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device PackageD²PAK (TO-263)
Other
Base Product NumberFDB350
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds815 pF @ 40 V
Mfronsemi
Product StatusActive
Rds On (Max) @ Id, Vgs47mOhm @ 6A, 10V
SeriesPowerTrench®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4.5V @ 250µA

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