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Technical parameters

Key specs

ChannelN-channel
Drain-source voltage250 V
Continuous drain current44 A
On-resistance69 mΩMax · 22A
Gate threshold voltage5 VMax · 250μA
Power
Current - Continuous Drain (Id) @ 25°C44A (Tc)
Drain to Source Voltage (Vdss)250 V
Drive Voltage (Max Rds On, Min Rds On)10V
Power Dissipation (Max)307W (Tc)
Environment and package
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT) Digi-Reel®
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device PackageD²PAK (TO-263)
Other
Base Product NumberFDB44N25
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2870 pF @ 25 V
Mfronsemi
Product StatusActive
Rds On (Max) @ Id, Vgs69mOhm @ 22A, 10V
SeriesUniFET™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id5V @ 250µA

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