FDB8447L
onsemi美国

FDB8447L

停产单 FET,MOSFETD²PAK

MOSFET N-CH 40V 15A/50A TO263AB

沟道N 沟道
耐压40 V
连续漏极电流15 ~ 50 A
导通电阻8.5 mΩ

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技术参数

沟道N 沟道
耐压40 V
连续漏极电流15 ~ 50 A
导通电阻8.5 mΩ最大 · 14A
阈值电压3 V最大 · 250μA
电源
Current - Continuous Drain (Id) @ 25°C15A (Ta), 50A (Tc)
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Power Dissipation (Max)3.1W (Ta), 60W (Tc)
环境与封装
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT) Digi-Reel®
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device PackageD²PAK (TO-263)
其他
Base Product NumberFDB8447
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2620 pF @ 20 V
Mfronsemi
Product StatusObsolete
Rds On (Max) @ Id, Vgs8.5mOhm @ 14A, 10V
SeriesPowerTrench®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3V @ 250µA

器件图片

技术资料