onsemi美国

FDBL0200N100

在产单 FET,MOSFET

MOSFET N-CH 100V 300A 8HPSOF

沟道N 沟道
耐压100 V
连续漏极电流300 A
导通电阻2 mΩ

全部替代型号

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技术参数

沟道N 沟道
耐压100 V
连续漏极电流300 A
导通电阻2 mΩ最大 · 80A
阈值电压4.5 V最大 · 250μA
电源
Current - Continuous Drain (Id) @ 25°C300A (Tc)
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)10V
Power Dissipation (Max)429W (Tc)
环境与封装
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT) Digi-Reel®
Package / Case8-PowerSFN
Supplier Device Package8-HPSOF
其他
Base Product NumberFDBL0200
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs133 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds9760 pF @ 50 V
Mfronsemi
Product StatusActive
Rds On (Max) @ Id, Vgs2mOhm @ 80A, 10V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4.5V @ 250µA

技术资料