onsemi美国

FDC606P

在产单 FET,MOSFETSOT-23-6 Thin

MOSFET P-CH 12V 6A SUPERSOT6

沟道P 沟道
耐压12 V
连续漏极电流6 A
导通电阻26 mΩ

全部替代型号

查看完整报告

技术参数

沟道P 沟道
耐压12 V
连续漏极电流6 A
导通电阻26 mΩ最大 · 6A
阈值电压1.5 V最大 · 250μA
电源
Current - Continuous Drain (Id) @ 25°C6A (Ta)
Drain to Source Voltage (Vdss)12 V
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Power Dissipation (Max)1.6W (Ta)
环境与封装
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT) Digi-Reel®
Package / CaseSOT-23-6 Thin, TSOT-23-6
Supplier Device PackageSuperSOT™-6
其他
Base Product NumberFDC606
FET Feature-
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs25 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds1699 pF @ 6 V
Mfronsemi
Product StatusActive
Rds On (Max) @ Id, Vgs26mOhm @ 6A, 4.5V
SeriesPowerTrench®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±8V
Vgs(th) (Max) @ Id1.5V @ 250µA

技术资料