onsemi美国

FDC6320C

停产FET,MOSFET 阵列

MOSFET N/P-CH 25V 0.22A SSOT6

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技术参数

电源
Current - Continuous Drain (Id) @ 25°C220mA, 120mA
Drain to Source Voltage (Vdss)25V
Power - Max700mW
环境与封装
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT) Digi-Reel®
Package / CaseSOT-23-6 Thin, TSOT-23-6
Supplier Device PackageSuperSOT™-6
其他
Base Product NumberFDC6320
ConfigurationN and P-Channel
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs0.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds9.5pF @ 10V
Mfronsemi
Product StatusObsolete
Rds On (Max) @ Id, Vgs4Ohm @ 400mA, 4.5V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1.5V @ 250µA

技术资料