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Technical parameters

Power
Current - Continuous Drain (Id) @ 25°C220mA, 460mA
Drain to Source Voltage (Vdss)25V
Power - Max700mW
Environment and package
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageBulk
Package / CaseSOT-23-6 Thin, TSOT-23-6
Supplier Device PackageSuperSOT™-6
Other
Base Product NumberFDC6322
ConfigurationN and P-Channel
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs0.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds9.5pF @ 10V
MfrFairchild Semiconductor
Product StatusObsolete
Rds On (Max) @ Id, Vgs4Ohm @ 400mA, 4.5V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1.5V @ 250µA

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