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Technical parameters

Key specs

ChannelP-channel
Drain-source voltage20 V
Continuous drain current7 A
On-resistance22 mΩMax · 7A
Gate threshold voltage1.5 VMax · 250μA
Power
Current - Continuous Drain (Id) @ 25°C7A (Ta)
Drain to Source Voltage (Vdss)20 V
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Power Dissipation (Max)2W (Ta)
Environment and package
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageBulk
Package / Case6-SSOT Flat-lead, SuperSOT™-6 FLMP
Supplier Device PackageSuperSOT™-6 FLMP
Other
FET Feature-
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs38 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds2640 pF @ 10 V
MfrFairchild Semiconductor
Product StatusObsolete
Rds On (Max) @ Id, Vgs22mOhm @ 7A, 4.5V
SeriesPowerTrench®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±12V
Vgs(th) (Max) @ Id1.5V @ 250µA

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