Fairchild SemiconductorUnited States
N-CHANNEL POWER MOSFET
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Key specs
ChannelN-channel
Drain-source voltage30 V
Continuous drain current12 ~ 46 A
On-resistance12 mΩMax · 12A
Gate threshold voltage3 VMax · 250μA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 12A (Ta), 46A (Tc) |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Power Dissipation (Max) | 1.5W (Ta), 56W (Tc) |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Package | Bulk |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package | TO-252 (DPAK) |
| Other | |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1230 pF @ 15 V |
| Mfr | Fairchild Semiconductor |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 12mOhm @ 12A, 10V |
| Series | PowerTrench® |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
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