FDD6606
onsemi美国

FDD6606

停产单 FET,MOSFETTO-252AA

MOSFET N-CH 30V 75A D-PAK

沟道N 沟道
耐压30 V
连续漏极电流75 A
导通电阻6 mΩ

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技术参数

沟道N 沟道
耐压30 V
连续漏极电流75 A
导通电阻6 mΩ最大 · 17A
阈值电压3 V最大 · 250μA
电源
Current - Continuous Drain (Id) @ 25°C75A (Ta)
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Power Dissipation (Max)71W (Tc)
环境与封装
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device PackageTO-252AA
其他
Base Product NumberFDD660
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs31 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds2400 pF @ 15 V
Mfronsemi
Product StatusObsolete
Rds On (Max) @ Id, Vgs6mOhm @ 17A, 10V
SeriesPowerTrench®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3V @ 250µA

器件图片

技术资料