FDD6680AS
onsemi美国

FDD6680AS

停产单 FET,MOSFETTO-252AA

MOSFET N-CH 30V 55A TO252

沟道N 沟道
耐压30 V
连续漏极电流55 A
导通电阻10.5 mΩ

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技术参数

沟道N 沟道
耐压30 V
连续漏极电流55 A
导通电阻10.5 mΩ最大 · 12.5A
阈值电压3 V最大 · 1mA
电源
Current - Continuous Drain (Id) @ 25°C55A (Ta)
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Power Dissipation (Max)60W (Ta)
环境与封装
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT) Digi-Reel®
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device PackageTO-252AA
其他
Base Product NumberFDD668
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1200 pF @ 15 V
Mfronsemi
Product StatusObsolete
Rds On (Max) @ Id, Vgs10.5mOhm @ 12.5A, 10V
SeriesPowerTrench®, SyncFET™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3V @ 1mA

器件图片

技术资料