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Technical parameters

Key specs

ChannelN-channel
Drain-source voltage40 V
Continuous drain current15.2 ~ 50 A
On-resistance8.5 mΩMax · 14A
Gate threshold voltage3 VMax · 250μA
Power
Current - Continuous Drain (Id) @ 25°C15.2A (Ta), 50A (Tc)
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Power Dissipation (Max)3.1W (Ta), 44W (Tc)
Environment and package
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT) Digi-Reel®
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device PackageTO-252AA
Other
Base Product NumberFDD8447
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1970 pF @ 20 V
Mfronsemi
Product StatusActive
Rds On (Max) @ Id, Vgs8.5mOhm @ 14A, 10V
SeriesPowerTrench®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3V @ 250µA

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