FDD8451
onsemi美国

FDD8451

末批订购单 FET,MOSFETTO-252AA

MOSFET N-CH 40V 9A/28A DPAK

沟道N 沟道
耐压40 V
连续漏极电流9 ~ 28 A
导通电阻24 mΩ

全部替代型号

查看完整报告

技术参数

沟道N 沟道
耐压40 V
连续漏极电流9 ~ 28 A
导通电阻24 mΩ最大 · 9A
阈值电压3 V最大 · 250μA
电源
Current - Continuous Drain (Id) @ 25°C9A (Ta), 28A (Tc)
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Power Dissipation (Max)30W (Tc)
环境与封装
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT) Digi-Reel®
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device PackageTO-252AA
其他
Base Product NumberFDD845
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds990 pF @ 20 V
Mfronsemi
Product StatusLast Time Buy
Rds On (Max) @ Id, Vgs24mOhm @ 9A, 10V
SeriesPowerTrench®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3V @ 250µA

器件图片

技术资料