FDD8770
onsemi美国

FDD8770

停产单 FET,MOSFETTO-252AA

MOSFET N-CH 25V 35A TO252AA

沟道N 沟道
耐压25 V
连续漏极电流35 A
导通电阻4 mΩ

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技术参数

沟道N 沟道
耐压25 V
连续漏极电流35 A
导通电阻4 mΩ最大 · 35A
阈值电压2.5 V最大 · 250μA
电源
Current - Continuous Drain (Id) @ 25°C35A (Tc)
Drain to Source Voltage (Vdss)25 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Power Dissipation (Max)115W (Tc)
环境与封装
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT) Digi-Reel®
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device PackageTO-252AA
其他
Base Product NumberFDD877
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3720 pF @ 13 V
Mfronsemi
Product StatusObsolete
Rds On (Max) @ Id, Vgs4mOhm @ 35A, 10V
SeriesPowerTrench®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.5V @ 250µA

器件图片

技术资料