onsemiUnited States
MOSFET N-CH 20V 4A MICROFET
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View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage20 V
Continuous drain current4 A
On-resistance100 mΩMax · 4A
Gate threshold voltage1.5 VMax · 250μA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 4A (Ta) |
| Drain to Source Voltage (Vdss) | 20 V |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Power Dissipation (Max) | 1.7W (Ta) |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR) Cut Tape (CT) Digi-Reel® |
| Package / Case | 6-WDFN Exposed Pad |
| Supplier Device Package | MicroFET 3x3mm |
| Other | |
| Base Product Number | FDFM2 |
| FET Feature | Schottky Diode (Isolated) |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 3.8 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 273 pF @ 10 V |
| Mfr | onsemi |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 4A, 4.5V |
| Series | PowerTrench® |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±12V |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |