onsemiUnited States
MOSFET P-CH 20V 3.1A 6MICROFET
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View full reportTechnical parameters
Key specs
ChannelP-channel
Drain-source voltage20 V
Continuous drain current3.1 A
On-resistance95 mΩMax · 3.1A
Gate threshold voltage1.5 VMax · 250μA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 3.1A (Ta) |
| Drain to Source Voltage (Vdss) | 20 V |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Power Dissipation (Max) | 1.4W (Tj) |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR) |
| Package / Case | 6-VDFN Exposed Pad |
| Supplier Device Package | 6-MicroFET (2x2) |
| Other | |
| Base Product Number | FDFMA2 |
| FET Feature | Schottky Diode (Isolated) |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 720 pF @ 10 V |
| Mfr | onsemi |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 95mOhm @ 3.1A, 4.5V |
| Series | PowerTrench® |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±12V |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |