Fairchild SemiconductorUnited States

FDFMA2P859T

ObsoleteSingle FETs, MOSFETs6-UDFN Exposed Pad

MOSFET P-CH 20V 3A MICROFET

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Technical parameters

Key specs

ChannelP-channel
Drain-source voltage20 V
Continuous drain current3 A
On-resistance120 mΩMax · 3A
Gate threshold voltage1.3 VMax · 250μA
Power
Current - Continuous Drain (Id) @ 25°C3A (Ta)
Drain to Source Voltage (Vdss)20 V
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Power Dissipation (Max)1.4W (Ta)
Environment and package
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageBulk
Package / Case6-UDFN Exposed Pad
Supplier Device PackageMicroFET 2x2 Thin
Other
FET FeatureSchottky Diode (Isolated)
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds435 pF @ 10 V
MfrFairchild Semiconductor
Product StatusObsolete
Rds On (Max) @ Id, Vgs120mOhm @ 3A, 4.5V
SeriesPowerTrench®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±8V
Vgs(th) (Max) @ Id1.3V @ 250µA

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