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Technical parameters

Key specs

ChannelP-channel
Drain-source voltage20 V
Continuous drain current1.5 A
On-resistance140 mΩMax · 1.5A
Gate threshold voltage1.5 VMax · 250μA
Power
Current - Continuous Drain (Id) @ 25°C1.5A (Ta)
Drain to Source Voltage (Vdss)20 V
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Power Dissipation (Max)750mW (Ta)
Environment and package
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageBulk
Package / Case6-TSSOP, SC-88, SOT-363
Supplier Device PackageSC-88 (SC-70-6)
Other
FET Feature-
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds467 pF @ 10 V
MfrFairchild Semiconductor
Product StatusObsolete
Rds On (Max) @ Id, Vgs140mOhm @ 1.5A, 4.5V
SeriesPowerTrench®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±8V
Vgs(th) (Max) @ Id1.5V @ 250µA

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