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Technical parameters

Key specs

ChannelN-channel
Drain-source voltage100 V
Continuous drain current600 mA
On-resistance500 mΩMax · 600mA
Gate threshold voltage4 VMax · 250μA
Power
Current - Continuous Drain (Id) @ 25°C600mA (Ta)
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Power Dissipation (Max)420mW (Ta)
Environment and package
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageBulk
Package / Case6-TSSOP, SC-88, SOT-363
Supplier Device PackageSC-88 (SC-70-6)
Other
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds153 pF @ 50 V
MfrFairchild Semiconductor
Product StatusObsolete
Rds On (Max) @ Id, Vgs500mOhm @ 600mA, 10V
SeriesPowerTrench®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 250µA

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