FDG6322C
onsemi美国

FDG6322C

在产FET,MOSFET 阵列

MOSFET N/P-CH 25V 0.22A SC88

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技术参数

电源
Current - Continuous Drain (Id) @ 25°C220mA, 410mA
Drain to Source Voltage (Vdss)25V
Power - Max300mW
环境与封装
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT) Digi-Reel®
Package / Case6-TSSOP, SC-88, SOT-363
Supplier Device PackageSC-88 (SC-70-6)
其他
Base Product NumberFDG6322
ConfigurationN and P-Channel
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs0.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds9.5pF @ 10V
Mfronsemi
Product StatusActive
Rds On (Max) @ Id, Vgs4Ohm @ 220mA, 4.5V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1.5V @ 250µA

器件图片

技术资料