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技术参数

电源
Current - Continuous Drain (Id) @ 25°C8.7A
Drain to Source Voltage (Vdss)20V
Power - Max800mW
环境与封装
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageBulk
Package / Case6-UDFN Exposed Pad
Supplier Device PackageMicroFET 2x2 Thin
其他
Base Product NumberFDM2509
Configuration2 N-Channel (Dual)
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs17nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds1200pF @ 10V
MfrFairchild Semiconductor
Product StatusObsolete
Rds On (Max) @ Id, Vgs18mOhm @ 8.7A, 4.5V
SeriesPowerTrench®
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1.5V @ 250µA

技术资料