onsemi美国

FDMA1025P

停产FET,MOSFET 阵列

MOSFET 2P-CH 20V 3.1A 6MICROFET

全部替代型号

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技术参数

电源
Current - Continuous Drain (Id) @ 25°C3.1A
Drain to Source Voltage (Vdss)20V
Power - Max700mW
环境与封装
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageCut Tape (CT) Digi-Reel®
Package / Case6-VDFN Exposed Pad
Supplier Device Package6-MicroFET (2x2)
其他
Base Product NumberFDMA1025
Configuration2 P-Channel (Dual)
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs4.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds450pF @ 10V
Mfronsemi
Product StatusObsolete
Rds On (Max) @ Id, Vgs155mOhm @ 3.1A, 4.5V
SeriesPowerTrench®
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1.5V @ 250µA

技术资料