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Technical parameters

Key specs

ChannelN-channel
Drain-source voltage25 V
Continuous drain current124 A
On-resistance1.9 mΩMax · 28A
Gate threshold voltage3 VMax · 1mA
Power
Current - Continuous Drain (Id) @ 25°C124A (Tc)
Drain to Source Voltage (Vdss)25 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Power Dissipation (Max)47W (Tc)
Environment and package
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT) Digi-Reel®
Package / Case8-PowerWDFN
Supplier Device PackagePower33
Other
Base Product NumberFDMC2D8
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds4615 pF @ 13 V
Mfronsemi
Product StatusObsolete
Rds On (Max) @ Id, Vgs1.9mOhm @ 28A, 10V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±16V
Vgs(th) (Max) @ Id3V @ 1mA

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