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Technical parameters

Key specs

ChannelP-channel
Drain-source voltage30 V
Continuous drain current8.5 ~ 18 A
On-resistance20 mΩMax · 8.5A
Gate threshold voltage3 VMax · 250μA
Power
Current - Continuous Drain (Id) @ 25°C8.5A (Ta), 18A (Tc)
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Power Dissipation (Max)2.3W (Ta), 31W (Tc)
Environment and package
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT) Digi-Reel®
Package / Case8-PowerWDFN
Supplier Device Package8-MLP (3.3x3.3)
Other
Base Product NumberFDMC4435
FET Feature-
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2045 pF @ 15 V
Mfronsemi
Product StatusActive
Rds On (Max) @ Id, Vgs20mOhm @ 8.5A, 10V
SeriesPowerTrench®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±25V
Vgs(th) (Max) @ Id3V @ 250µA

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