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Technical parameters

Key specs

ChannelN-channel
Drain-source voltage25 V
Continuous drain current22.5 ~ 40 A
On-resistance3.15 mΩMax · 22.5A
Gate threshold voltage3 VMax · 1mA
Power
Current - Continuous Drain (Id) @ 25°C22.5A (Ta), 40A (Tc)
Drain to Source Voltage (Vdss)25 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Power Dissipation (Max)2.3W (Ta), 52W (Tc)
Environment and package
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT) Digi-Reel®
Package / Case8-PowerTDFN
Supplier Device PackagePower33
Other
Base Product NumberFDMC7572
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2705 pF @ 13 V
Mfronsemi
Product StatusActive
Rds On (Max) @ Id, Vgs3.15mOhm @ 22.5A, 10V
SeriesPowerTrench®, SyncFET™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3V @ 1mA

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