onsemi美国

FDMC7672S

在产单 FET,MOSFET

MOSFET N-CH 30V 14.8A/18A 8MLP

沟道N 沟道
耐压30 V
连续漏极电流14.8 ~ 18 A
导通电阻6 mΩ

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技术参数

沟道N 沟道
耐压30 V
连续漏极电流14.8 ~ 18 A
导通电阻6 mΩ最大 · 14.8A
阈值电压3 V最大 · 1mA
电源
Current - Continuous Drain (Id) @ 25°C14.8A (Ta), 18A (Tc)
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Power Dissipation (Max)2.3W (Ta), 36W (Tc)
环境与封装
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT) Digi-Reel®
Package / Case8-PowerWDFN
Supplier Device Package8-MLP (3.3x3.3)
其他
Base Product NumberFDMC7672
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2520 pF @ 15 V
Mfronsemi
Product StatusActive
Rds On (Max) @ Id, Vgs6mOhm @ 14.8A, 10V
SeriesPowerTrench®, SyncFET™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3V @ 1mA

技术资料