All alternatives

View full report

Technical parameters

Key specs

ChannelN-channel
Drain-source voltage30 V
Continuous drain current30 ~ 75 A
On-resistance1.3 mΩMax · 30A
Gate threshold voltage2.5 VMax · 1mA
Power
Current - Continuous Drain (Id) @ 25°C30A (Ta), 75A (Tc)
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Power Dissipation (Max)2.4W (Ta), 54W (Tc)
Environment and package
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT) Digi-Reel®
Package / Case8-PowerWDFN
Supplier Device PackagePower33
Other
Base Product NumberFDMC80
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds5860 pF @ 15 V
Mfronsemi
Product StatusActive
Rds On (Max) @ Id, Vgs1.3mOhm @ 30A, 10V
SeriesPowerTrench®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.5V @ 1mA

Documents