onsemi美国

FDMC8327L

在产单 FET,MOSFET

MOSFET N-CH 40V 12A/14A 8MLP

沟道N 沟道
耐压40 V
连续漏极电流12 ~ 14 A
导通电阻9.7 mΩ

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技术参数

沟道N 沟道
耐压40 V
连续漏极电流12 ~ 14 A
导通电阻9.7 mΩ最大 · 12A
阈值电压3 V最大 · 250μA
电源
Current - Continuous Drain (Id) @ 25°C12A (Ta), 14A (Tc)
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Power Dissipation (Max)2.3W (Ta), 30W (Tc)
环境与封装
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT) Digi-Reel®
Package / Case8-PowerWDFN
Supplier Device Package8-MLP (3.3x3.3)
其他
Base Product NumberFDMC8327
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1850 pF @ 20 V
Mfronsemi
Product StatusActive
Rds On (Max) @ Id, Vgs9.7mOhm @ 12A, 10V
SeriesPowerTrench®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3V @ 250µA

技术资料