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View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage25 V
Continuous drain current16.5 ~ 40 A
On-resistance5 mΩMax · 17A
Gate threshold voltage1.8 VMax · 250μA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 16.5A (Ta), 40A (Tc) |
| Drain to Source Voltage (Vdss) | 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Power Dissipation (Max) | 2.4W (Ta), 26W (Tc) |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Supplier Device Package | Power33 |
| Other | |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1720 pF @ 13 V |
| Mfr | onsemi |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 5mOhm @ 17A, 10V |
| Series | PowerTrench® |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±12V |
| Vgs(th) (Max) @ Id | 1.8V @ 250µA |
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