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Technical parameters

Key specs

ChannelN-channel
Drain-source voltage80 V
Continuous drain current7 ~ 20 A
On-resistance23 mΩMax · 7A
Gate threshold voltage4 VMax · 250μA
Power
Current - Continuous Drain (Id) @ 25°C7A (Ta), 20A (Tc)
Drain to Source Voltage (Vdss)80 V
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Power Dissipation (Max)2.3W (Ta), 41W (Tc)
Environment and package
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
Package / Case8-PowerTDFN
Supplier Device PackagePower33
Other
Base Product NumberFDMC86
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds965 pF @ 50 V
Mfronsemi
Product StatusActive
Rds On (Max) @ Id, Vgs23mOhm @ 7A, 10V
SeriesPowerTrench®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 250µA

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