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Technical parameters

Key specs

ChannelN-channel
Drain-source voltage30 V
Continuous drain current9 ~ 15 A
On-resistance19 mΩMax · 9A
Gate threshold voltage2.5 VMax · 250μA
Power
Current - Continuous Drain (Id) @ 25°C9A (Ta), 15A (Tc)
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Power Dissipation (Max)2.3W (Ta), 18W (Tc)
Environment and package
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageBulk
Package / Case8-PowerWDFN
Supplier Device Package8-MLP (3.3x3.3)
Other
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds685 pF @ 15 V
MfrFairchild Semiconductor
Product StatusActive
Rds On (Max) @ Id, Vgs19mOhm @ 9A, 10V
SeriesPowerTrench®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.5V @ 250µA

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